Ti1 Fe1 Bi2 O6

semiconductor

· Ti1 Fe1 Bi2 O6

Ti₁Fe₁Bi₂O₆ is an oxide semiconductor compound combining titanium, iron, and bismuth in a mixed-valent ceramic structure. This is primarily a research material rather than an established commercial product; it belongs to the family of complex bismuth-based oxides being investigated for photocatalytic and electronic applications. The material is of interest in photocatalysis research, solar energy conversion, and potentially optoelectronic devices, where bismuth oxides and iron-titanium mixed oxides are known to show visible-light activity and tunable band gaps—advantages over conventional wide-band-gap semiconductors for environmental remediation and energy harvesting applications.

photocatalysis researchvisible-light driven catalysissolar energy conversionwater treatment/pollutant degradationoptoelectronic device developmentmaterials science experimentation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00160	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.865	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ti1 Fe1 Bi2 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control