ThSeO is a rare-earth selenide oxide semiconductor compound combining thorium, selenium, and oxygen. This material belongs to the family of mixed-anion semiconductors and remains primarily in the research and development phase, with applications under investigation in optoelectronics and solid-state physics rather than widespread commercial production. Engineers would consider ThSeO for specialized roles where its unique electronic band structure and thermal stability offer advantages over conventional semiconductors, particularly in environments requiring radiation hardness or high-temperature operation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18,419.8 | ksi | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 9,581.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3386 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.650 | eV | — | ||
| ↳ | 0.9690 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 26.78 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -131.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -3.123 | eV/atom | — |