ThOSe is a mixed-anion semiconductor compound combining thorium, oxygen, and selenium in a layered or mixed structure. This material exists primarily in research contexts as part of exploration into thorium-based semiconductors and mixed-chalcogenide systems, offering potential for optoelectronic and radiation-hardened device applications where thorium's nuclear stability and the semiconductor properties of the chalcogenide framework could be leveraged.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.650 | eV | — |