Th3S1 is a semiconductor compound composed of thorium and sulfur in a 3:1 stoichiometric ratio. This material belongs to the rare-earth and actinide chalcogenide family, with potential applications in specialized electronic and photonic devices where conventional semiconductors prove inadequate. As a research-phase compound, Th3S1 is primarily of interest to materials scientists exploring novel electronic properties in actinide-based systems, though its practical engineering applications remain limited and would require demonstration of advantages over established semiconductor alternatives in specific niche use cases.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 60.06 | GPa | — | ||
Shear Modulus(G) | 20.41 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00150 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2320 | eV/atom | — |