Th₂Te₂O₂ is an experimental mixed-anion semiconductor compound combining thorium, tellurium, and oxygen in a layered crystal structure. This material belongs to the family of thorium chalcogenide oxides currently under investigation for advanced photonic and electronic device applications where unconventional band structures and anisotropic properties may be exploited. Research interest centers on understanding its optoelectronic behavior and potential use in niche applications where thorium-based compounds offer advantages over conventional semiconductors, though it remains largely confined to fundamental research rather than established industrial production.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,204 | ksi | — | ||
Shear Modulus(G) | 8,864.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2015 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.801 | eV/atom | — |