Th₂SeN₂ is an experimental semiconductor compound combining thorium, selenium, and nitrogen in a ternary nitride-chalcogenide system. This material remains primarily in research phase, with potential applications in wide-bandgap semiconductors and high-temperature electronics where conventional semiconductors reach performance limits. The combination of thorium and nitrogen chemistry suggests exploration for nuclear materials compatibility, while the selenium incorporation may tune electronic and optical properties for niche semiconductor device architectures.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17,805.8 | ksi | — | ||
Shear Modulus(G) | 9,207 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.676 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.106 | eV/atom | — |