Th₂S₂O₂ is an experimental mixed-anion semiconductor compound containing thorium, combining sulfide and oxide chemistry in a single phase. This material belongs to the family of actinide chalcogenides and oxyhalides under investigation for advanced electronic and photonic applications where unconventional band structure engineering is sought. Research into such thorium-based compounds is primarily driven by fundamental solid-state physics studies and potential niche applications in radiation-hardened or high-temperature semiconductor devices, though the material remains largely in the research phase without significant commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20,616.2 | ksi | — | ||
Shear Modulus(G) | 10,028.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.269 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.293 | eV/atom | — |