Th2 H1 N3
semiconductorTh2H1N3 is an experimental ternary nitride compound containing thorium, hydrogen, and nitrogen, belonging to the wider family of metal nitride semiconductors under active materials research. This compound is primarily of interest in fundamental solid-state physics and computational materials science rather than established industrial production, where researchers investigate its electronic band structure and potential applications in next-generation semiconductor devices. The material represents an exploratory system where the interplay between thorium's f-electron chemistry, hydrogen incorporation, and nitrogen bonding creates a unique electronic landscape—making it a candidate for theoretical study of exotic electronic states, though practical device-scale applications remain in early-stage development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |