ThSiAu is an experimental intermetallic compound combining thorium, silicon, and gold in equiatomic proportions, classified as a semiconductor material. This ternary phase represents a research-level compound within the thorium-silicon-gold system, with potential applications in high-temperature electronics and specialized semiconductor devices where the unique electronic properties of thorium intermetallics could provide advantages over conventional semiconductors. The material remains primarily of academic interest, and practical deployment would require further development to address processing challenges and to establish reliable performance data for engineering applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18,242.6 | ksi | — | ||
Shear Modulus(G) | 9,492.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01340 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7650 | eV/atom | — |