Th1 Bi1

semiconductor

· Th1 Bi1

Th1Bi1 is an intermetallic semiconductor compound combining thorium and bismuth in a 1:1 stoichiometric ratio. This is a research-phase material studied for potential electronic and thermoelectric applications, with properties characteristic of intermetallic semiconductors that may offer advantages in high-temperature or specialized electronic device environments where conventional semiconductors are limited.

thermoelectric deviceshigh-temperature electronicssemiconductor researchintermetallic compoundsmaterials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	76.33	GPa	—
Shear Modulus(G)	26.96	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00920	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5670	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Th1 Bi1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control