TeW2SeS2 is a mixed transition metal chalcogenide compound combining tellurium, tungsten, selenium, and sulfur in a layered crystal structure. This material belongs to the family of two-dimensional transition metal dichalcogenides (TMDs) and related heterostructures, primarily investigated in research settings for next-generation electronic and optoelectronic devices. The compound's layered structure and tunable band gap make it a candidate for applications requiring thin-film semiconducting behavior, though it remains largely in the experimental phase and is not yet established in high-volume industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 435.1 | ksi | — | ||
Poisson's Ratio(ν) | 0.1600 | - | — | ||
Shear Modulus(G) | 380 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2070 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4070 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 28.40 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.04281 | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2508 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5034 | eV/atom | — |