TeSiON2

semiconductor
· TeSiON2

TeSiON2 is a tellurium-silicon oxynitride semiconductor compound that combines tellurium and silicon in an oxynitride matrix, creating a material with mixed-valent electronic properties. This composition positions it within the family of chalcogenide semiconductors and likely represents a research or specialized engineering material designed for optoelectronic or solid-state device applications where tunable band gaps and mixed oxidation states offer advantages over conventional binary semiconductors. The incorporation of nitrogen into a tellurium-silicon oxide lattice suggests potential applications in photovoltaics, infrared sensing, or high-temperature electronic devices where traditional materials face thermal or spectral limitations.

infrared detectors and sensorsphotovoltaic devicesoptoelectronic componentssolid-state electronics researchhigh-temperature semiconductorsthin-film devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Magnetic Moment(μB)
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μB——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
—
eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.