Tellurium iodide (TeI) is an inorganic semiconductor compound combining tellurium and iodine elements. This material belongs to the chalcohalide family and is primarily of research and developmental interest rather than established high-volume industrial production. TeI is investigated for optoelectronic and photovoltaic applications where its semiconductor bandgap and light-absorption properties could enable next-generation detectors, infrared sensors, and thin-film solar cells, though practical engineering adoption remains limited compared to more mature semiconductors like silicon or gallium arsenide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15.34 | GPa | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 9.290 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.357 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.100 | eV | — | ||
| ↳ | 0.7320 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00430 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.06974 | eV/atom | — |