TeGeON2 — Properties & Data | MatWorld

TeGeON2

semiconductor

· TeGeON2

TeGeON2 is a tellurium-germanium-oxygen nitride compound semiconductor, likely a research-phase material combining elements from the telluride and nitride families. This composition suggests potential for optoelectronic or wide-bandgap semiconductor applications, though the material remains largely experimental and would typically be investigated for niche photonic or high-temperature electronic device architectures where conventional group III-V or II-VI semiconductors are insufficient.

experimental optoelectronicswide-bandgap semiconductor researchinfrared detectors (potential)high-temperature electronics (potential)materials research and developmentphotonic device engineering (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.0000302	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8200	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TeGeON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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