TeGaON2 — Properties & Data | MatWorld

TeGaON2

ceramic

· TeGaON2

TeGaON2 is a tellurium-gallium oxynitride ceramic compound that combines elements from semiconductor and ceramic materials science. This material is primarily investigated in research contexts for optoelectronic and photonic applications, where the dual anion system (oxygen and nitrogen) can tailor bandgap and electronic properties beyond traditional gallium nitride or gallium oxide alone. Engineers considering this material should note it remains largely experimental; it appeals to researchers developing next-generation wide-bandgap semiconductors for power electronics, UV sensing, or photocatalysis where conventional materials reach performance limits.

wide-bandgap semiconductorsUV photodetectorsphotocatalytic coatingshigh-power electronics researchthin-film optoelectronicsemerging semiconductor compounds

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.6914	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.100	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TeGaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental