TeGaO₂N is an experimental oxynitride ceramic combining tellurium, gallium, oxygen, and nitrogen—a compound still primarily in research and development rather than established industrial production. Materials in this chemical family are investigated for wide-bandgap semiconductor and photocatalytic applications, where the mixed anionic composition (oxide + nitride) can enable tunable electronic properties and improved visible-light absorption compared to conventional oxides. Engineers would consider such oxynitrides for next-generation photocatalysis, solar energy conversion, or high-temperature ceramic applications where conventional gallium oxide or gallium nitride alone have limitations, though material availability and processing maturity remain significant barriers to deployment.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.00234 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8200 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data