TeGaN3 — Properties & Data | MatWorld

TeGaN3

ceramic

· TeGaN3

TeGaN3 is an experimental ternary ceramic compound combining tellurium, gallium, and nitrogen, belonging to the family of wide-bandgap semiconductors and advanced ceramics. This material remains largely in the research phase, with potential applications in high-temperature electronics, power devices, and optoelectronic components where the combination of thermal stability, wide bandgap characteristics, and nitride-based chemistry could offer advantages over conventional GaN or AlN systems. Its development is motivated by the semiconductor industry's drive toward materials that can operate at higher temperatures and frequencies than current gallium nitride technology, though commercial adoption and manufacturing maturity are not yet established.

wide-bandgap semiconductor researchhigh-temperature power electronicsadvanced optoelectronic devicesthermal management compoundsexperimental semiconductor applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	1.341	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.920	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TeGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental