TeBO2N — Properties & Data | MatWorld

TeBO2N

semiconductor

· TeBO2N

TeBO2N is a boron-nitrogen compound semiconductor combining tellurium, boron, oxygen, and nitrogen elements. This material exists primarily in research contexts as an emerging wide-bandgap semiconductor, part of the broader family of compound semiconductors being investigated for high-temperature, high-power, and radiation-resistant electronic applications. Its combination of light elements (B, N, O) with tellurium suggests potential for optoelectronic or power device applications, though industrial adoption remains limited compared to established alternatives like GaN or SiC.

wide-bandgap semiconductorsexperimental power electronicshigh-temperature devicesradiation-hard electronicsoptoelectronic researchemerging compound semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.000249	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.240	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TeBO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control