Te8Mo3W1 is an experimental tellurium-molybdenum-tungsten compound classified as a semiconductor material. This ternary system combines tellurium's semiconducting properties with refractory metal elements (molybdenum and tungsten) to engineer materials with potential for high-temperature stability and modified electronic characteristics. Research into such tellurium-based multinary compounds typically targets thermoelectric applications, optoelectronic devices, or specialized sensing systems where conventional binary semiconductors (like pure tellurium or tellurides) lack sufficient thermal robustness or desired band structure properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,055.6 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,254.9 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8672 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1690 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data