Te6Bi6 is a bismuth telluride-based compound belonging to the narrow-gap semiconductor family, likely a stoichiometric or near-stoichiometric composite material combining tellurium and bismuth in 1:1 atomic ratio. This composition falls within the chalcogenide semiconductor class, which has been extensively studied for thermoelectric and optoelectronic applications, though Te6Bi6 as a specific phase is primarily of research interest rather than established commercial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02410 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2000 | eV/atom | — |