Te4W3Se2 is a mixed chalcogenide compound combining tungsten with tellurium and selenium—a material family that bridges traditional metallurgy and semiconductor science. This composition is primarily of research and development interest rather than established industrial production; such tellurium-tungsten-selenium systems are investigated for potential applications in thermoelectric energy conversion, thin-film electronics, and specialized optical devices where the layered chalcogenide structure may offer tunable electronic properties. Engineers considering this material should recognize it as an emerging compound requiring custom synthesis and characterization for specific advanced applications rather than a commodity material with mature supply chains.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 37.71 | ksi | — | ||
Poisson's Ratio(ν) | 0.09000 | - | — | ||
Shear Modulus(G) | 42.06 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2291 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3680 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 13.30 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.07777 | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2037 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1530 | eV/atom | — |