Te4W4Se2S2 is a mixed-chalcogenide semiconductor compound combining tellurium, tungsten, selenium, and sulfur elements. This is an experimental material primarily of research interest for next-generation optoelectronic and thermoelectric applications, belonging to the family of transition metal chalcogenides known for tunable band gaps and potential high charge-carrier mobility. The material's multi-element composition positions it as a candidate for solid-state devices where conventional binary or ternary semiconductors show performance limitations, though production methods and reproducibility remain under active investigation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1070 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2980 | eV/atom | — |