Te₄O₁₀ is a tellurium oxide semiconductor compound that belongs to the family of mixed-valence tellurium oxides, which are primarily studied for optoelectronic and photonic applications. This material is largely experimental and appears in materials research contexts investigating non-linear optical properties, photoconductivity, and potential applications in infrared sensing and photovoltaic devices. Engineers would consider tellurium oxide semiconductors when exploring alternatives to more conventional oxide semiconductors, particularly where the unique electronic structure of tellurium—capable of supporting multiple oxidation states—offers advantages in light-matter interaction or charge transport.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 60.61 | GPa | — | ||
Shear Modulus(G) | 49.01 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.847 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9890 | eV/atom | — |