Te₄Mo₃Se₂ is a mixed-chalcogenide semiconductor compound combining tellurium, molybdenum, and selenium in a layered or complex crystal structure. This is a research-phase material primarily investigated for its potential in thermoelectric energy conversion and optoelectronic applications, where the combination of heavy chalcogenides and transition metals can yield tunable bandgaps and phonon-scattering behavior. Interest in this composition family stems from the ability to engineer thermal and electrical properties simultaneously—a goal central to next-generation thermoelectric devices and potentially photovoltaic or photodetector systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1198 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3290 | eV/atom | — |