Te4Mo2W2Se4 is an experimental mixed-chalcogenide semiconductor compound combining tellurium, molybdenum, tungsten, and selenium in a layered or complex crystal structure. This material belongs to the family of transition metal chalcogenides, which are of significant research interest for their tunable electronic and optoelectronic properties. The incorporation of multiple transition metals (Mo and W) alongside mixed chalcogens (Te and Se) creates a platform for band-gap engineering and enhanced carrier mobility, making it potentially valuable for next-generation photovoltaic devices, photodetectors, and other quantum-scale electronic applications where conventional semiconductors reach performance limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,573.5 | ksi | — | ||
Shear Modulus(G) | 3,083.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1621 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3220 | eV/atom | — |