Te₄Mo₁W₃Se₄ is a mixed chalcogenide semiconductor compound combining tellurium, selenium, molybdenum, and tungsten elements. This is a research-phase material within the transition metal chalcogenide family, studied for its potential layered crystal structure and tunable electronic properties that could enable 2D device applications. The multi-element composition allows engineering of bandgap and carrier transport characteristics compared to simpler binary or ternary chalcogenides, making it of interest for next-generation optoelectronic and quantum device platforms where conventional semiconductors reach fundamental limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1320 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2875 range -0.2910–-0.2840median of 2 measurements | eV/atom | — |