Te3As2 is a layered chalcogenide ceramic compound combining tellurium and arsenic elements, belonging to the family of binary telluride-arsenide materials. This is a research-phase material primarily of interest for its anisotropic layered crystal structure and weak interlayer bonding characteristics. The compound is being investigated in materials science research for potential applications in thermoelectric devices, layered semiconductor systems, and exfoliable nanomaterial synthesis, where its distinctive structural properties offer advantages over conventional semiconductors in enabling controlled layer separation and 2D material fabrication.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,145.2 | ksi | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 71.72 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2300 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,963.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2204 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4690 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 43.52 | - | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 0.2100 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.3733 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00474 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00422 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -202.1 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 314.7 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00350 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.00768 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data