Te₂As is a chalcogenide ceramic compound combining tellurium and arsenic elements, belonging to the family of binary semiconducting ceramics studied for advanced electronic and photonic applications. This material is primarily of research interest rather than established industrial production, with potential applications in infrared optics, thermoelectric devices, and solid-state electronics where its chalcogenide composition offers tunable bandgap and thermal properties. Engineers would consider Te₂As-based compositions in niche applications requiring materials with specific optical transmission windows or thermoelectric efficiency, though commercial availability and processing maturity remain limited compared to more established compound semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2291 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.05370 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.04441 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data