Te₂W₃Se₄ is a mixed chalcogenide semiconductor compound combining tellurium, tungsten, and selenium. This is a research-phase material being investigated for optoelectronic and photovoltaic applications, belonging to the broader family of layered transition metal chalcogenides that exhibit tunable bandgaps and potential for high charge carrier mobility. The material's heterogeneous composition makes it a candidate for engineered heterostructures and band-gap engineering in next-generation solar cells, photodetectors, and solid-state electronics where the combination of heavy (W, Te) and lighter (Se) elements may enable favorable electronic properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,161.7 range 4,418.9–7,904.6median of 2 measurements | ksi | — | ||
Shear Modulus(G) | 4,400.4 range 3,141.5–5,659.4median of 2 measurements | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6907 range 0.6038–0.7777median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3350 range -0.3480–-0.3220median of 2 measurements | eV/atom | — |