Te2O6 is a tellurium oxide semiconductor compound that belongs to the family of mixed-valence transition metal oxides. While not widely commercialized as a bulk engineering material, tellurium oxides are of significant research interest for their semiconductor and photonic properties, particularly in optoelectronic and sensing applications where their bandgap and optical transparency characteristics offer advantages over conventional alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,483.9 | ksi | — | ||
Shear Modulus(G) | 272.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3612 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1420 | eV/atom | — |