Te₂N₄ is an inorganic semiconductor compound combining tellurium and nitrogen, belonging to the family of metal nitride and chalcogenide semiconductors. This material is primarily of research and development interest rather than an established industrial commodity, with potential applications in optoelectronics, thermoelectrics, and energy conversion where its bandgap and carrier transport properties could offer advantages over more conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02040 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.323 | eV/atom | — |