Te₂Mo₃W₁Se₆ is a mixed-metal chalcogenide semiconductor compound combining tellurium, molybdenum, tungsten, and selenium—elements commonly used in layered and transition-metal-based semiconducting systems. This is a research-phase material being investigated for its potential in optoelectronic and thermoelectric applications, where the combination of heavy chalcogens and transition metals creates tunable electronic band structures and strong light-matter coupling. Such ternary and quaternary chalcogenide semiconductors are of interest as alternatives to conventional III-V semiconductors where band gap engineering, strong spin-orbit coupling, or improved thermal properties are desired.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,864.2 | ksi | — | ||
Shear Modulus(G) | 5,455.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1917 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4910 | eV/atom | — |