Te₂Mo₂W₂Se₂S₄ is a mixed-metal chalcogenide semiconductor composed of molybdenum, tungsten, tellurium, selenium, and sulfur. This is primarily a research-phase material exploring layered heterostructures and high-entropy chalcogenide compounds for next-generation electronic and optoelectronic devices. Engineers investigating this material would be targeting applications requiring tunable band gaps, enhanced charge carrier mobility, or catalytic activity that multi-element chalcogenides can provide compared to binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,264.9 | ksi | — | ||
Shear Modulus(G) | 3,718.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.08250 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5450 | eV/atom | — |