Te2 Mo2 W2 S6

semiconductor

· Te2 Mo2 W2 S6

Te₂Mo₂W₂S₆ is a mixed-metal chalcogenide semiconductor composed of tellurium, molybdenum, tungsten, and sulfur in a layered crystalline structure. This is an emerging research material within the transition metal dichalcogenide (TMD) family, designed to combine the electronic and optoelectronic properties of its constituent elements for enhanced performance in energy conversion and light-matter interactions. The material is primarily of interest for next-generation photovoltaics, photodetectors, and 2D device platforms where heterostructure engineering and band-gap tuning are critical.

photovoltaic devicesphotodetectors2D electronics researchoptoelectronic heterostructuresenergy harvestingsemiconductor thin films

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00510	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6540	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Te2 Mo2 W2 S6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control