Te₂Mo₂W₁Se₂S₂ is an experimental mixed-chalcogenide semiconductor compound combining tellurium, molybdenum, tungsten, selenium, and sulfur—a complex composition designed to engineer bandgap and electronic properties beyond single-element or binary semiconductors. This material belongs to the family of transitional metal dichalcogenides (TMDs) and high-entropy semiconductors, which are primarily investigated in research settings for optoelectronic and photovoltaic applications where tunable electronic structure and reduced defect sensitivity are advantageous over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,178.5 | ksi | — | ||
Shear Modulus(G) | 5,205.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01050 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5450 | eV/atom | — |