Te₂Mo₁W₃Se₆ is a mixed transition-metal chalcogenide semiconductor composed of tellurium, molybdenum, tungsten, and selenium. This is a research-phase compound within the broader family of layered transition-metal dichalcogenides (TMDs) and their heterostructures, studied primarily for its electronic and photonic properties rather than as an established commercial material. Applications under investigation include photovoltaic devices, photodetectors, and thermoelectric energy conversion, where the combination of multiple transition metals and mixed chalcogens offers tunable bandgap and carrier transport characteristics relative to single-component TMDs like MoS₂ or WTe₂.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7199 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4250 | eV/atom | — |