Te2 Mo1 W3 S6

semiconductor

· Te2 Mo1 W3 S6

Te₂Mo₁W₃S₆ is a mixed-metal chalcogenide semiconductor compound combining tellurium, molybdenum, tungsten, and sulfur in a layered crystal structure. This is a research-phase material being investigated for its potential electronic and optoelectronic properties, particularly as part of the broader family of transition metal dichalcogenide (TMD) and related heterostructures that offer tunable bandgaps and strong light-matter interactions. Engineers and researchers are exploring such materials for next-generation energy conversion, sensing, and quantum devices where traditional silicon reaches fundamental limits.

photovoltaic devices and solar cellsphotodetectors and optical sensorsthermoelectric energy conversion2D heterostructure engineeringquantum and nanoelectronic researchflexible/transparent electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00650	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6010	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Te2 Mo1 W3 S6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control