Te₂Mo₁W₂Se₄ is an experimental mixed-metal chalcogenide semiconductor combining tellurium, molybdenum, tungsten, and selenium in a layered compound structure. This material belongs to the family of transition metal dichalcogenides and related mixed-metal variants, which are being actively researched for next-generation optoelectronic and quantum devices due to their tunable bandgap and strong light-matter interactions. The combination of multiple transition metals with chalcogenide ligands creates opportunities for engineered electronic properties not easily achievable in binary or ternary compounds, making it of particular interest in materials research rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,354.3 | ksi | — | ||
Shear Modulus(G) | 2,978.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7377 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3880 | eV/atom | — |