Te₂Mo₁W₂Se₂S₂ is a mixed-chalcogenide semiconductor compound combining tellurium, molybdenum, tungsten, selenium, and sulfur in a layered structure. This is an experimental material currently under research investigation for optoelectronic and photovoltaic applications, where the multi-element composition enables tuning of the bandgap and electronic properties beyond what single-chalcogenide or binary compounds can achieve. The material belongs to the transition metal dichalcogenide family and is being explored as a potential candidate for next-generation thin-film solar cells, photodetectors, and photocatalytic devices where enhanced light absorption and charge transport are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 34.91 | GPa | — | ||
Shear Modulus(G) | 23.71 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3852 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4320 | eV/atom | — |