Te₂Mo₁W₂S₄ is a mixed-metal dichalcogenide semiconductor composed of tellurium, molybdenum, tungsten, and sulfur. This is a research-phase layered compound belonging to the transition metal chalcogenide family, which has attracted interest for its tunable electronic and optoelectronic properties arising from its ternary metal composition. The material represents an emerging class of semiconductors being explored for next-generation devices where bandgap engineering and heteroatom substitution offer advantages over binary TMDs (like MoS₂ or WS₂) in controlling charge carrier behavior and light absorption.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,879.6 | ksi | — | ||
Shear Modulus(G) | 3,154.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06160 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5200 | eV/atom | — |