Te2H4O8 is a tellurium-based semiconducting compound containing tellurium, hydrogen, and oxygen elements. This material represents an experimental composition within the tellurium oxide and hydride family, which is primarily of research interest for optoelectronic and photovoltaic applications. While not yet established in mainstream industrial production, tellurium compounds are being investigated for next-generation solar cells, infrared detectors, and thermoelectric devices where their semiconducting properties and thermal stability could offer advantages over conventional alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 65.11 range 63.91–66.31median of 2 measurements | GPa | — | ||
Shear Modulus(G) | 54.83 range 53.59–56.07median of 2 measurements | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.726 range 1.717–1.734median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9385 range -0.9420–-0.9350median of 2 measurements | eV/atom | — |