TeWO₆ is a mixed-metal oxide semiconductor compound combining tellurium and tungsten in a 1:1 ratio, belonging to the broader family of transition metal oxides and tungstate-based materials. This compound is primarily of research interest for photocatalytic and optoelectronic applications, where the combination of tungsten and tellurium components can offer tunable bandgaps and enhanced charge-carrier properties compared to single-metal oxide alternatives. While not yet widely commercialized in mainstream engineering, TeWO₆ and related tellurium-tungsten oxides are being investigated for environmental remediation and next-generation electronic device development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.395 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.566 | eV/atom | — |