Te0.01Pb1Se0.99 is a lead selenide (PbSe) semiconductor with tellurium doping, belonging to the IV-VI narrow-bandgap semiconductor family. This material is primarily investigated for thermoelectric and infrared detection applications, where its tunable bandgap and carrier concentration enable efficient conversion between thermal and electrical energy or sensitive detection of mid-wave infrared radiation. The tellurium incorporation modifies electronic properties relative to undoped PbSe, making it relevant for optimizing performance in high-temperature thermoelectric generators and thermal imaging systems where lead chalcogenides offer advantages over conventional silicon-based alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2600 | eV | — |