TcSe₂ is a layered transition metal dichalcogenide semiconductor compound composed of technetium and selenium. As a research material rather than a commercially established engineering material, it belongs to the TMD family known for potential applications in nanoelectronics, optoelectronics, and energy storage due to their tunable band gaps and strong light-matter interactions. Interest in TcSe₂ stems from its predicted electronic properties and the broader exploration of rare transition metal chalcogenides for next-generation devices where conventional semiconductors reach fundamental limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2528 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.8800 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2161 | eV/atom | — |