Tc1 C1 is a semiconductor compound, likely a transition metal carbide or intermetallic phase based on its designation. While specific composition details are not provided, materials in this class are typically investigated for high-temperature electronics, power devices, or wear-resistant applications where conventional semiconductors reach their performance limits. The material represents an emerging research area rather than a mature commercial product, with potential applications in extreme-environment sensing or high-power switching where thermal stability and mechanical robustness are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 48,321.8 | ksi | — | ||
Shear Modulus(G) | 5,427.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02240 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.5770 | eV/atom | — |