Tc1 B1 is a semiconductor compound belonging to the transitional metal-based materials family, likely part of research into binary intermetallic or ceramic semiconductor phases. While specific composition details are not provided, materials in this class are typically investigated for their electrical and thermal properties in advanced device applications. Researchers and engineers explore such compounds for potential use in high-temperature electronics, power semiconductors, or specialized optoelectronic devices where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 42,119.8 range 40,523.5–43,716median of 2 measurements | ksi | — | ||
Shear Modulus(G) | 18,508.8 range 11,138.9–25,878.6median of 2 measurements | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00175 range 0.00110–0.05550median of 4 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1010 range -0.2620–0.6850median of 4 measurements | eV/atom | — |