TbGaO3
semiconductorTbGaO3 is a rare-earth gallate ceramic compound combining terbium oxide with gallium oxide, forming a semiconductor material within the wider family of rare-earth perovskite and garnet-related structures. This is a research-phase material primarily investigated for its potential in optoelectronic and photonic applications, particularly where the combination of rare-earth luminescence properties and gallium-based semiconductor characteristics offers advantages in scintillators, phosphors, or radiation detection systems. Engineers considering TbGaO3 would typically be working on next-generation detector materials or specialty optical devices where the rare-earth dopant behavior and band structure engineering outweigh the material's relative immaturity and processing complexity compared to established alternatives like YAG or conventional GaN semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2932 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.981 | eV | — | ||
| ↳ | 3.880 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -127.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -2.833 | eV/atom | — | ||
| ↳ | -2.939 | eV/atom | — |