TbGaO3 — Properties & Data | MatWorld

TbGaO3

semiconductor

· TbGaO3

TbGaO3 is a rare-earth gallate ceramic compound combining terbium oxide with gallium oxide, forming a semiconductor material within the wider family of rare-earth perovskite and garnet-related structures. This is a research-phase material primarily investigated for its potential in optoelectronic and photonic applications, particularly where the combination of rare-earth luminescence properties and gallium-based semiconductor characteristics offers advantages in scintillators, phosphors, or radiation detection systems. Engineers considering TbGaO3 would typically be working on next-generation detector materials or specialty optical devices where the rare-earth dopant behavior and band structure engineering outweigh the material's relative immaturity and processing complexity compared to established alternatives like YAG or conventional GaN semiconductors.

scintillation detectorsrare-earth phosphorsradiation sensingoptoelectronic researchphotonic materials developmenthigh-energy physics instrumentation

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?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2932	lb/in³	DFT · OptB88vdW

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Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	3.880	eV	DFT · OptB88vdW
↳	6.401	eV	DFT · TBmBJ
↳	3.981	eV	DFT · PBE
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	4.593	-	DFT · OptB88vdW
↳	3.594	-	DFT · TBmBJ
Magnetic Moment(μB)2 entries	0.000	μB	DFT
↳	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000832	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000437	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-127.8	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	442.5	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	0.000	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-2.833	eV/atom	DFT
↳	-2.939	eV/atom	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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TbGaO3

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