Tb8S12 is a rare-earth sulfide semiconductor compound belonging to the terbium sulfide family, likely an experimental or specialized material studied for its electronic and optical properties. This material represents research into rare-earth chalcogenides, which are investigated for potential applications in optoelectronics, thermal management, and specialized semiconductor devices where conventional materials reach performance limits. Terbium sulfides are notable for their potential in high-temperature environments and applications requiring unique magnetic or luminescent properties inherent to rare-earth dopants.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,508.6 | ksi | — | ||
Shear Modulus(G) | 6,669.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2472 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.261 | eV/atom | — |