Tb4 V4 O12

semiconductor

· Tb4 V4 O12

Tb₄V₄O₁₂ is a mixed-metal oxide semiconductor combining terbium and vanadium in a layered perovskite-related structure. This material remains primarily in research and development phases, investigated for potential applications in solid-state electronics and photocatalysis due to the unique electronic properties arising from the combination of rare-earth (terbium) and transition-metal (vanadium) sites. The material family is of interest to researchers exploring alternative semiconductors with tailored band gaps and catalytic activity, though industrial-scale adoption and production remain limited.

photocatalytic applicationssolid-state electronics researchrare-earth oxide semiconductorsthin-film devicesmaterials screening for optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.183	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tb4 V4 O12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control