Tb₄O₆ is a rare-earth oxide semiconductor compound containing terbium, belonging to the family of lanthanide oxides used in electronic and photonic device research. This material is primarily explored in experimental and developmental contexts for its potential in optoelectronic applications, magnetic devices, and advanced ceramics where rare-earth oxides offer unique electronic and optical properties unavailable in conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04010 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.319 | eV/atom | — |